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DIODES: PI6CB332000ZDIEX PI6C49S1510BZDIEX PI3WVR646GEEX DMT8012LPS-13 ZXMS6004FFQTA PDS360Q-13 FMMT491QTA SBRT3U40P1Q-7 SDT5H100P5-7 MBR5200VPTR-E1 AL5816QW5-7 AL5809-20QP1-7 PI3EQX1004EZTFEX PI3DPX1203BZLEX PI3USB30532ZLEX PI3DBS16412ZLCEX PI3EQX1002B1ZLEX PI3HDMI511ZLEX AP62300TWU-7 AP62200TWU-7 ZXTN2010ZTA ZXTP2012ZTA MBR2150VRTR-G1 ZXTN25012EFHTA ZXMN10A08E6TA AL5809-50QP1-7 BAV70Q-7-F AZ1084CD-3.3TRG1 BAS20DWQ-13 AP7343D-30FS4-7B BAW101Q-7 PDS5100Q-13D DUP2105SOQ-7 DFLZ36Q-7 FZT751QTA FZT651TA SBRT3U40P1-7 DMTH4005SK3Q-13 PI3USB302-AZBEX BC847AT-7-F

MPS: AH1389-HK4-7 BZX84C10Q D12V0H1U2WSQ B260A BAW56Q 1N4148WSQ AZ431AZ-ATRE1 MBR2150VRTR ZXTN25012EFHTA BZT52C3V3Q BCP55TA BZT52C5V6LP BAS20DWQ AP7343D-30FS4-7B BZT52C39Q BZX84C4V3Q DUP2105SOQ AP7365-25WG BCP5610TA DMTH4005SK3Q DDZ9701 DDZ9691Q BZX84C6V2Q AP7350D-18CF4 DMTH4004LPS BC846A BAS40-04Q B340AQ BC847BQ DMN3110LCP3 SBR05U20LPS SDM02M30LP3 BAT54LP PDS5100Q BZX84C18Q AL5809-50QP1 MP9495 MP9447 MP9361 MP6907 NB680 MP2307 MP2303 MP3423 MP3421 MP3394 MP2359 MP2322 MP2225 MP2130 MP2000 MP2229 MP1471 MP1470 BAV170Q ZXMN6A08E6TA AL8400QSE DMN6040SK3 AN431AN-ATRG1 DMP6023LFGQ APX809-26SAG BZT52C3V9LP DMP2035UVT BSP75NTA BZT52C16 ZMR500QFTA BZX84C9V1Q PDS5100HQ-13D AP4310AMTR PI3USB31532ZLEX 2N7002KQ BSS123 DFLS260Q S3MB S3G S2M BZX84C9V1 BZX84C6V2 B160Q S8KC PI6CB332000ZDIEX PI6C49S1510BZDIEX PI3WVR646GEEX PDS360Q FMMT491QTA SDT5H100P5 MBR5200VPTR PI3EQX1004EZTFEX PI3USB30532ZLEX PI4ULS5V108LEX PI3EQX1002B1ZLEX PI3HDMI511ZLEX AP62300 AP62200 BAW101Q BAS16Q PI3USB302 DZT853 AZ1117 MP9989

• 贴装低泄漏二极管• VRRM VRWM VR 85V• VR(RMS) 60V• IFM 单 215 双125mA• IFSM 4.0-0.5

• 60V N沟道增强型MOSFET• V(BR)DSS 60v• RDS（ON）80mΩ @ VGS=10V ID 3.5A 150mΩ @ VGS=4.5V ID 2.5A

• 具有200mV电流感应电压和汽车等级的线性LED驱动器控制器• VCC 20 V• VOUT OUT 20 V• VFB FB电 20 V • VE1 E1- 0.3至+0.3 V

• 60V N沟道增强型MOSFET• V(BR)DSS 60v• RDS(on) max 40mΩ @ VGS = 10V ID 20A 50mΩ @ VGS = 4.5V ID 16A

• 2.5 SOT23 可调并联调节器• 可编程精密输出电压2.5V至36V• 低温偏差 4.5mV• 低等效全量程温度系数，典型温度为20PPM/oC• 低动态输出电阻：0.15Ω 典型的• 吸收电流容量从1mA到100mA• 低输出噪声 SOT2

• 60V P沟道增强型MOSFET• V(BR)DSS -60V• RDS(ON) max 25mΩ@VGS=-10V-7.7A 33mΩ@VGS=-4.5V -6.8A• ID max TA = +25C